- Package / Case :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | N-Channel | 650V | 328pF @ 100V | 34.7W (Tc) | 4.2A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 650V | 328pF @ 100V | 37W (Tc) | 4.5A (Tc) | 10V | 950 mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | N-Channel | 650V | 225pF @ 100V | 26.6W (Tc) | 3A (Tc) | 10V | 1.5 Ohm @ 1A, 10V | 3.5V @ 100µA | 11nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | N-Channel | 600V | 200pF @ 100V | 26.6W (Tc) | 3A (Tc) | 10V | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252-3 | N-Channel | 600V | 140pF @ 100V | 22.3W (Tc) | 2.4A (Tc) | 10V | 2 Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 600V | 200pF @ 100V | 28.4W (Tc) | 3.2A (Tc) | 10V | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V 4.4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | N-Channel | 600V | 280pF @ 100V | 37W (Tc) | 4.4A (Tc) | 10V | 950 mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 650V 83.2A TO247-3 | TO-247-3 | CoolMOS™ C6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | N-Channel | 650V | 7240pF @ 100V | 500W (Tc) | 83.2A (Tc) | 10V | 37 mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V 10.6A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 600V | 700pF @ 100V | 83W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | - |