- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 11.7A 1212-8 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252 | N-Channel | 100V | 2950pF @ 25V | 136W (Tc) | 50A (Tc) | 4.5V, 10V | 8.9 mOhm @ 15A, 10V | 2.5V @ 250µA | 70nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 16A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 180A D2PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Microsemi Corporation | MOSFET N-CH 800V 13A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 800V | 2950pF @ 25V | 310W (Tc) | 13A (Tc) | 10V | 750 mOhm @ 6.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 600V | 2950pF @ 25V | 310W (Tc) | 18A (Tc) | 10V | 400 mOhm @ 9A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 600V | 2950pF @ 25V | 310W (Tc) | 18A (Tc) | 10V | 400 mOhm @ 9A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 23A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 500V | 2950pF @ 25V | 310W (Tc) | 23A (Tc) | 10V | 250 mOhm @ 11.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 11A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 11A (Tc) | 10V | 1 Ohm @ 5.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 20A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 500V | 2950pF @ 25V | 290W (Tc) | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 500µA | 75nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 20A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 500V | 2950pF @ 25V | 290W (Tc) | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 500µA | 75nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V 20.2A TO-220F | TO-220-3 Full Pack | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F-3 | N-Channel | 600V | 2950pF @ 25V | 39W (Tc) | 20.2A (Tc) | 10V | 199 mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V TO-220-3 | TO-220-3 Full Pack | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F-3 | N-Channel | 600V | 2950pF @ 25V | 39W (Tc) | 20.2A (Tc) | 10V | 199 mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V TO-220-3 | TO-220-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 600V | 2950pF @ 25V | 208W (Tc) | 20.2A (Tc) | 10V | 199 mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V TO220-3 | TO-220-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 600V | 2950pF @ 25V | 208W (Tc) | 20.2A (Tc) | 10V | 199 mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 13A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 800V | 2950pF @ 25V | 310W (Tc) | 13A (Tc) | 10V | 750 mOhm @ 6.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 600V | 2950pF @ 25V | 310W (Tc) | 18A (Tc) | 10V | 400 mOhm @ 9A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 23A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 500V | 2950pF @ 25V | 310W (Tc) | 23A (Tc) | 10V | 250 mOhm @ 11.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 20A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 500V | 2950pF @ 25V | 290W (Tc) | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 500µA | 75nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 42A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 40V | 2950pF @ 25V | 140W (Tc) | 42A (Tc) | 10V | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CHAN 100V TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252 | N-Channel | 100V | 2950pF @ 25V | 136W (Tc) | 50A (Tc) | 4.5V, 10V | 8.9 mOhm @ 15A, 10V | 2.5V @ 250µA | 70nC @ 10V | ±20V | - |