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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N CH 40V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | N-Channel | 40V | 4730pF @ 25V | 208W (Tc) | 120A (Tc) | 6V, 10V | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N CH 40V 120A TO220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | N-Channel | 40V | 4730pF @ 25V | 208W (Tc) | 120A (Tc) | 6V, 10V | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 40V | 4730pF @ 25V | 208W (Tc) | 120A (Tc) | 6V, 10V | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | - | |||||
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5,984
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | 8-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | N-Channel | 40V | 4730pF @ 25V | 3.6W (Ta), 156W (Tc) | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | N-Channel | 40V | 4730pF @ 25V | 3.6W (Ta), 156W (Tc) | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | - | ||||
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Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 40V | 4730pF @ 25V | 208W (Tc) | 120A (Tc) | 6V, 10V | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | - |