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11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE6250PGV3
RFQ
Infineon Technologies MOSFET N-CH 100V 8.7A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
TAA861
RFQ
Infineon Technologies MOSFET N-CH 100V 36A TO-220AB TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak N-Channel 55V 740pF @ 50V 39W (Tc) 19A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
SPP23N60C3
RFQ
Infineon Technologies MOSFET N-CH 20V 37A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
SPP15P10PL
RFQ
Infineon Technologies MOSFET N-CH 55V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
SPP11N60C2
RFQ
Infineon Technologies MOSFET P-CH 55V 14A TO220FP TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
SPP08N50C3HKSA1
RFQ
Infineon Technologies MOSFET N-CH 20V 37A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
IRLR4343TRPBF
RFQ
Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
IRLU4343PBF
RFQ
Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
IRLR4343PBF
RFQ
Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
IRLU4343
RFQ
Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
IRLR4343
RFQ
Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 55V 740pF @ 50V 79W (Tc) 26A (Tc) 4.5V, 10V 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V ±20V -
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