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2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPD50R380CF
Per Unit
$0.4640
RFQ
Infineon Technologies MOSFET N-CH 100V 27A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 N-Channel 100V 1570pF @ 50V 58W (Tc) 27A (Tc) 10V 33 mOhm @ 27A, 10V 4V @ 29µA 24nC @ 10V ±20V -
IPP35CN10N G
RFQ
Infineon Technologies MOSFET N-CH 100V 27A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 N-Channel 100V 1570pF @ 50V 58W (Tc) 27A (Tc) 10V 35 mOhm @ 27A, 10V 4V @ 29µA 24nC @ 10V ±20V -
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