- Manufacture :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Gate Charge (Qg) (Max) @ Vgs :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 600V 21A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-FP | N-Channel | 600V | 2000pF @ 100V | 34W (Tc) | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 660µA | 52nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 650V 21A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO262-3 | N-Channel | 650V | 2000pF @ 100V | 192W (Tc) | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V 21A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | N-Channel | 600V | 2000pF @ 100V | 192W (Tc) | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V 21A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | N-Channel | 600V | 2000pF @ 100V | 192W (Tc) | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V 21A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO263-3-2 | N-Channel | 600V | 2000pF @ 100V | 192W (Tc) | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CHANNEL 600V 11A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 | N-Channel | 600V | 2000pF @ 100V | 278W (Tc) | 11A (Tc) | 10V | 440 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | ||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-263 (D²Pak) | N-Channel | 600V | 2000pF @ 100V | 278W (Tc) | 11A (Tc) | 10V | 440 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 | N-Channel | 600V | 2000pF @ 100V | 278W (Tc) | 11A (Tc) | 10V | 400 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | ||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-263 (D²Pak) | N-Channel | 600V | 2000pF @ 100V | 278W (Tc) | 11A (Tc) | 10V | 400 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO-262F | TO-262-3 Full Pack, I²Pak | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-262F | N-Channel | 600V | 2000pF @ 100V | 28W (Tc) | 11A (Tc) | 10V | 400 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V |