- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Sanken | MOSFET N-CH 280V 40A TO-3PF | TO-3P-3 Full Pack | - | Bulk | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-3P | N-Channel | 330V | 4600pF @ 25V | 85W (Tc) | 30A (Ta) | 10V | 63 mOhm @ 15A, 10V | 4.5V @ 1mA | - | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-247AC | N-Channel | 200V | 4600pF @ 25V | 330W (Tc) | 65A (Tc) | 10V | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 200V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | N-Channel | 200V | 4600pF @ 25V | 330W (Tc) | 62A (Tc) | 10V | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 200V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 200V | 4600pF @ 25V | 330W (Tc) | 62A (Tc) | 10V | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | - | |||||
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Infineon Technologies | MOSFET N-CH 200V 65A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 200V | 4600pF @ 25V | 330W (Tc) | 65A (Tc) | 10V | 24 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 200V 26A TO-220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | TO-220AB Full-Pak | N-Channel | 200V | 4600pF @ 25V | 46W (Tc) | 26A (Tc) | 10V | 25 mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | - |