- Mounting Type :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ P6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D²PAK (TO-263AB) | N-Channel | 600V | 557pF @ 100V | 63W (Tc) | 7.3A (Tc) | 10V | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V 4.9A TO220-FP | TO-220-3 Full Pack | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-FP | N-Channel | 600V | 557pF @ 100V | 28W (Tc) | 4.9A (Tc) | 10V | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V 7.3A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ P6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 600V | 557pF @ 100V | 63W (Tc) | 7.3A (Tc) | 10V | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | - |