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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB320N20N3G
Per Unit
$0.4023
RFQ
Infineon Technologies MOSFET N-CH 80V 40A 8TSDSON 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL N-Channel 80V 1300pF @ 40V 50W (Tc) 40A (Tc) 6V, 10V 11 mOhm @ 20A, 10V 3.8V @ 22µA 18.5nC @ 10V ±20V -
IPB020N10N5LF
Per Unit
$0.5690
RFQ
Infineon Technologies MOSFET N-CH 80V 49A 8TDSON 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 N-Channel 80V 1300pF @ 40V 2.5W (Ta), 50W (Tc) 49A (Tc) 6V, 10V 11.7 mOhm @ 25A, 10V 3.8V @ 22µA 18nC @ 10V ±20V -
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