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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PMB6725FV1.406ICPB
Per Unit
$5.1018
RFQ
Infineon Technologies MOSFET N-CH 650V TO247-4 TO-247-4 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 N-Channel 650V 2140pF @ 400V 128W (Tc) 24A (Tc) 10V 95 mOhm @ 11.8A, 10V 4V @ 590µA 45nC @ 10V ±20V -
PMB6258V V1.1
Per Unit
$3.7101
RFQ
Infineon Technologies MOSFET N-CH 650V TO220-3 TO-220-3 Full Pack CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-FP N-Channel 650V 2140pF @ 400V 34W (Tc) 12A (Tc) 10V 95 mOhm @ 11.8A, 10V 4V @ 590µA 45nC @ 10V ±20V -
PMB3258V1.1
Per Unit
$3.1174
RFQ
Infineon Technologies MOSFET N-CH 4VSON 4-PowerTSFN CoolMOS™ C7 MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-VSON-4 N-Channel 650V 2140pF @ 400V 128W (Tc) 21A (Tc) 10V 99 mOhm @ 5.9A, 10V 4V @ 590µA 45nC @ 10V ±20V -
IPI12CN10NG
Per Unit
$6.6500
RFQ
Infineon Technologies MOSFET N-CH 650V TO-220-3 TO-220-3 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 N-Channel 650V 2140pF @ 400V 128W (Tc) 24A (Tc) 10V 95 mOhm @ 11.8A, 10V 4V @ 590µA 45nC @ 10V ±20V -
IPI072N10N3G
Per Unit
$3.1290
RFQ
Infineon Technologies MOSFET N-CH TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ C7 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO263-3 N-Channel 650V 2140pF @ 400V 128W (Tc) 24A (Tc) 10V 95 mOhm @ 11.8A, 10V 4V @ 590µA 45nC @ 10V ±20V -
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