- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 20V 30A 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 30V | 2425pF @ 15V | 5W (Ta), 40W (Tc) | 60A (Tc) | 4.5V, 10V | 3.7 mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | +20V, -16V | - | |||||
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Vishay Siliconix | MOSFET N-CH 40V 30A PPAK SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | N-Channel | 30V | 2425pF @ 15V | 3.6W (Ta), 39W (Tc) | 30A (Tc) | 4.5V, 10V | 3.7 mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | +20V, -16V | - |