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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
UM6K31N TN
Per Unit
$1.9250
RFQ
ROHM Semiconductor MOSFET N-CHANNEL 600V 24A LPTS TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole 175°C (TJ) Active TO-247N N-Channel 650V 1526pF @ 500V 262W (Tc) 70A (Tc) 18V 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V +22V, -4V
RB557W
Per Unit
$1.9250
RFQ
ROHM Semiconductor MOSFET N-CHANNEL 600V 24A LPTS TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole 175°C (TJ) Active TO-247N N-Channel 650V 1526pF @ 500V 262W (Tc) 70A (Tc) 18V 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V +22V, -4V
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