- Series :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 100V | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 150V | 1516pF @ 75V | 6.25W (Ta), 125W (Tc) | 64.6A (Ta), 56.7A (Tc) | 7.5V, 10V | 17.7 mOhm @ 20A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 80V | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 100V | 5400pF @ 50V | 6.25W (Ta), 125W (Tc) | 23.2A (Ta), 95A (Tc) | 7.5V, 10V | 4.8 mOhm @ 20A, 10V | 3.4V @ 250µA | 108nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CHAN 600V PPAK SO-8L | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 80V | 5150pF @ 40V | 6.25W (Ta), 125W (Tc) | 32.8A (Ta), 100A (Tc) | 7.5V, 10V | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 105nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 40V 200A POWERPAK8 | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 30V | 9530pF @ 15V | 6.25W (Ta), 125W (Tc) | 82A (Ta), 100A (Tc) | 4.5V, 10V | 0.62 mOhm @ 20A, 10V | 2.2V @ 250µA | 188nC @ 10V | +20V, -16V | - | |||||
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Vishay Siliconix | MOSFET N-CHAN 600V DPAK TO-252 | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 40V | 9100pF @ 20V | 6.25W (Ta), 125W (Tc) | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88 mOhm @ 20A, 10V | 2.3V @ 250µA | 165nC @ 10V | +20V, -16V | - | |||||
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Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 200V | 1380pF @ 100V | 6.25W (Ta), 125W (Tc) | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9 mOhm @ 10A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 900V 1.7A D2PAK | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 30V | 10180pF @ 15V | 6.25W (Ta), 125W (Tc) | 69.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.8 mOhm @ 20A, 10V | 2V @ 250µA | 153nC @ 10V | +20V, -16V | - | |||||
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Vishay Siliconix | MOSFET P-CH 100V 19A D2PAK | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 25V | 8150pF @ 10V | 6.25W (Ta), 125W (Tc) | 79A (Ta), 100A (Tc) | 4.5V, 10V | 0.67 mOhm @ 20A, 10V | 2.1V @ 250µA | 170nC @ 10V | +20V, -16V | - | |||||
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Vishay Siliconix | MOSFET N-CH 500V 4.5A D2PAK | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 60V | 5130pF @ 30V | 6.25W (Ta), 125W (Tc) | 42.8A (Ta), 100A (Tc) | 6V, 10V | 1.7 mOhm @ 20A, 10V | 3.4V @ 250µA | 102nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CHAN 60V | PowerPAK® SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8DC | N-Channel | 60V | 5130pF @ 30V | 6.25W (Ta), 125W (Tc) | 42.8A (Ta), 100A (Tc) | 6V, 10V | 1.7 mOhm @ 20A, 10V | 3.4V @ 250µA | 102nC @ 10V | ±20V | - |