- Manufacture :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Nexperia USA Inc. | MOSFET N-CH 55V 335MA SOT-23 | TO-236-3, SC-59, SOT-23-3 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 150°C (TJ) | Obsolete | TO-236AB | N-Channel | 55V | 40pF @ 10V | 830mW (Tc) | 335mA (Ta) | 1.8V, 4.5V | 4 Ohm @ 500mA, 4.5V | 1.3V @ 1mA | 1nC @ 8V | ±10V | - | |||||
|
|
|
Nexperia USA Inc. | MOSFET N-CH 50V 173MA SOT-23 | TO-236-3, SC-59, SOT-23-3 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 150°C (TJ) | Obsolete | TO-236AB | N-Channel | 50V | 25pF @ 10V | 830mW (Tc) | 173mA (Ta) | 5V, 10V | 15 Ohm @ 100mA, 10V | 1V @ 1mA | - | ±20V | - | |||||
|
|
NXP USA Inc. | MOSFET N-CH 30V 2.5A SOT23 | TO-236-3, SC-59, SOT-23-3 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 150°C (TJ) | Obsolete | TO-236AB (SOT23) | N-Channel | 30V | 147pF @ 10V | 830mW (Tc) | 2.5A (Tc) | 4.5V, 10V | 117 mOhm @ 500mA, 10V | 2V @ 1mA | 4.6nC @ 10V | ±20V | - |