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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | N-Channel | 20V | 3710pF @ 10V | 3.6W (Ta), 52W (Tc) | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | ±12V | - | |||||
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Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | N-Channel | 20V | 3710pF @ 10V | 3.6W (Ta), 52W (Tc) | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | ±12V | - |