- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | N-Channel | 60V | 1350pF @ 25V | 3.6W (Ta), 89W (Tc) | 13.4A (Ta), 67A (Tc) | 10V | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 41A 8PQFN | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | N-Channel | 25V | 3420pF @ 13V | 3.6W (Ta), 89W (Tc) | 41A (Ta) | 4.5V, 10V | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 54nC @ 10V | ±20V | - |