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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
FP6163-12S5G
Per Unit
$2.7547
RFQ
Infineon Technologies MOSFET N-CH 4VSON 4-PowerTSFN CoolMOS™ P7 MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-VSON-4 N-Channel 650V 1952pF @ 400V 137W (Tc) 33A (Tc) 10V 105 mOhm @ 10.5A, 10V 4V @ 530µA 45nC @ 10V ±20V -
MC74HC32ADR2
Per Unit
$2.5900
RFQ
ON Semiconductor MOSFET N-CH 75V 75A TO-220 TO-220-3 UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220-3 N-Channel 75V 4468pF @ 25V 137W (Tc) 75A (Tc) 10V 11 mOhm @ 37.5A, 10V 4V @ 250µA 104nC @ 10V ±20V -
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