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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
MMVZ5231BPT
Per Unit
$0.3912
RFQ
ON Semiconductor MOSFET N-CHANNEL 60V 30A 8PQFN 8-PowerTDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 8-PQFN (5x6) N-Channel 60V 881pF @ 30V 50W (Tj) 30A (Tc) 10V 15 mOhm @ 30A, 10V 4V @ 250µA 19nC @ 10V ±20V -
MM54C30W/883C
Per Unit
$0.4951
RFQ
ON Semiconductor MOSFET NCH 40V 30A POWER56 8-PowerTDFN Automotive, AEC-Q101, PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs Power56 N-Channel 40V 1210pF @ 20V 50W (Tj) 30A (Tc) 10V 7 mOhm @ 30A, 10V 3V @ 250µA 28nC @ 10V ±20V -
MM54C00W/883C
Per Unit
$0.4204
RFQ
ON Semiconductor POWER TRENCH MOSFET 8-PowerTDFN Automotive, AEC-Q101, PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active Power56 N-Channel 80V 866pF @ 40V 50W (Tj) 30A (Tc) 10V 22 mOhm @ 30A, 10V 4V @ 250µA 21nC @ 10V ±20V -
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