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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPI084N06L3G
Per Unit
$3.7137
RFQ
Infineon Technologies MOSFET N-CH TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ P7 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D²PAK (TO-263AB) N-Channel 650V 2895pF @ 400V 164W (Tc) 48A (Tc) 10V 60 mOhm @ 15.9A, 10V 4V @ 800µA 67nC @ 10V ±20V -
IPC100N04S5L-5R5
Per Unit
$8.1400
RFQ
Infineon Technologies MOSFET N-CH 600V 48A TO247-3 TO-247-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 N-Channel 600V 2895pF @ 400V 164W (Tc) 48A (Tc) 10V 60 mOhm @ 15.9A, 10V 4V @ 800µA 67nC @ 10V ±20V -
IPC100N04S5L-4R2
Per Unit
$7.8900
RFQ
Infineon Technologies MOSFET N-CH 600V 48A TO220-3 TO-220-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 N-Channel 600V 2895pF @ 400V 164W (Tc) 48A (Tc) 10V 60 mOhm @ 15.9A, 10V 4V @ 800µA 67nC @ 10V ±20V -
FP6346-T6GTR
Per Unit
$7.9200
RFQ
Infineon Technologies MOSFET TO247-4 TO-247-4 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 N-Channel 600V 2895pF @ 400V 164W (Tc) 48A (Tc) 10V 60 mOhm @ 15.9A, 10V 4V @ 800µA 67nC @ 10V ±20V -
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