- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 40V 30A POWERPAKSO-8 | PowerPAK® SC-70-6 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SC-70-6 Single | N-Channel | 60V | 540pF @ 30V | 3.5W (Ta), 19W (Tc) | 10A (Ta), 12A (Tc) | 7.5V, 10V | 18.5 mOhm @ 4A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | 6-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | N-Channel | 20V | 1110pF @ 10V | 1.98W (Ta), 9.6W (Tc) | 10A (Ta), 12A (Tc) | 2.5V, 4.5V | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | ±12V | - |