- Manufacture :
- Package / Case :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
,TO-226_straightlead.jpg)
|
|
Diodes Incorporated | MOSFET N-CH 60V 0.6A TO92-3 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 40V | 3537pF @ 20V | 1W (Ta) | 14.4A (Ta) | 3.3V, 10V | 7.5 mOhm @ 10A, 10V | 3V @ 250µA | 74nC @ 10V | ±20V | |||||
|
|
Diodes Incorporated | MOSFET N-CH 130V 1A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | N-Channel | 240V | 188pF @ 25V | 760mW (Ta) | 480mA (Ta) | 3.3V, 10V | 3.5 Ohm @ 300mA, 10V | 2.5V @ 250µA | 6.6nC @ 10V | ±20V | |||||
|
|
Diodes Incorporated | MOSFET P-CH 20V 2.3A SOT23-6 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 40V | 3537pF @ 20V | 1W (Ta) | 14.4A (Ta) | 3.3V, 10V | 7.5 mOhm @ 10A, 10V | 3V @ 250µA | 74nC @ 10V | ±20V | |||||
|
|
Diodes Incorporated | MOSFET P-CH 40V 3.3A U-DFN2020 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | N-Channel | 240V | 188pF @ 25V | 760mW (Ta) | 480mA (Ta) | 3.3V, 10V | 3.5 Ohm @ 300mA, 10V | 2.5V @ 250µA | 6.6nC @ 10V | ±20V | |||||
|
|
ON Semiconductor | MOSFET N-CH 30V 10.7A UDFN6 | 6-UDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-UDFN (2x2) | N-Channel | 30V | 1172pF @ 15V | 630mW (Ta) | 6.8A (Ta) | 3.3V, 10V | 9 mOhm @ 9A, 10V | 2.1V @ 250µA | 18nC @ 10V | ±20V | |||||
|
|
|
ON Semiconductor | MOSFET N-CH 30V 10.7A 6UDFN | 6-UDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-UDFN (2x2) | N-Channel | 30V | 1172pF @ 15V | 630mW (Ta) | 6.8A (Ta) | 3.3V, 10V | 9 mOhm @ 9A, 10V | 2.1V @ 250µA | 18nC @ 10V | ±20V | |||||
|
|
|
ON Semiconductor | MOSFET N-CH 30V 10.7A UDFN6 | 6-UDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-UDFN (2x2) | N-Channel | 30V | 1172pF @ 15V | 630mW (Ta) | 6.8A (Ta) | 3.3V, 10V | 9 mOhm @ 9A, 10V | 2.1V @ 250µA | 18nC @ 10V | ±20V |