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Input Capacitance (Ciss) (Max) @ Vds :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STW45NM50FD
RFQ
STMicroelectronics MOSFET N-CH 500V 45A TO-247 FDmesh™ Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 500V 3600pF @ 25V 417W (Tc) 45A (Tc) 10V 100 mOhm @ 22.5A, 10V 5V @ 250µA 120nC @ 10V ±30V -
STW45NM50
Per Unit
$8.9786
RFQ
STMicroelectronics MOSFET N-CH 500V 45A TO-247 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 150°C (TJ) Active TO-247-3 N-Channel 500V 3700pF @ 25V 417W (Tc) 45A (Tc) 10V 100 mOhm @ 22.5A, 10V 5V @ 250µA 117nC @ 10V ±30V -
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