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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NZX30C133
RFQ
ON Semiconductor MOSFET N-CH 200V 34A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 200V 3100pF @ 25V 210W (Tc) 34A (Tc) 10V 75 mOhm @ 17A, 10V 5V @ 250µA 78nC @ 10V ±30V -
NZX22B133
RFQ
ON Semiconductor MOSFET N-CH 200V 34A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 200V 3900pF @ 25V 210W (Tc) 34A (Tc) 5V, 10V 75 mOhm @ 17A, 10V 2V @ 250µA 72nC @ 5V ±20V -
NZH9V1B
RFQ
ON Semiconductor MOSFET N-CH 150V 34A TO-3P TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 150V 3370pF @ 25V 204W (Tc) 34A (Tc) 10V 75 mOhm @ 17A, 10V 4V @ 250µA 110nC @ 10V ±30V -
FQA34N20
RFQ
ON Semiconductor MOSFET N-CH 200V 34A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 200V 3100pF @ 25V 210W (Tc) 34A (Tc) 10V 75 mOhm @ 17A, 10V 5V @ 250µA 78nC @ 10V ±30V -
STW34NB20
RFQ
STMicroelectronics MOSFET N-CH 200V 34A TO-247 TO-247-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-247-3 N-Channel 200V 3300pF @ 25V 180W (Tc) 34A (Tc) 10V 75 mOhm @ 17A, 10V 5V @ 250µA 80nC @ 10V ±30V -
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