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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NCE0103M
RFQ
Vishay Siliconix MOSFET N-CH 100V 4.5A TO220FP TO-220-3 Full Pack, Isolated Tab - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 670pF @ 25V 42W (Tc) 9.7A (Tc) 10V 160 mOhm @ 5.8A, 10V 4V @ 250µA 33nC @ 10V ±20V
DMN2041LSD
Per Unit
$1.9800
RFQ
Vishay Siliconix MOSFET N-CH 250V 4.4A TO-220AB TO-220-3 Full Pack, Isolated Tab - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 N-Channel 100V 670pF @ 25V 42W (Tc) 9.7A (Tc) 10V 160 mOhm @ 5.8A, 10V 4V @ 250µA 33nC @ 10V ±20V
NTD15N06LT4G
RFQ
ON Semiconductor MOSFET N-CH 150V 11.6A TO-220F TO-220-3 Full Pack QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220F N-Channel 150V 910pF @ 25V 53W (Tc) 11.6A (Tc) 10V 160 mOhm @ 5.8A, 10V 4V @ 250µA 30nC @ 10V ±25V
IRFI530G
RFQ
Vishay Siliconix MOSFET N-CH 100V 9.7A TO220FP TO-220-3 Full Pack, Isolated Tab - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 670pF @ 25V 42W (Tc) 9.7A (Tc) 10V 160 mOhm @ 5.8A, 10V 4V @ 250µA 33nC @ 10V ±20V
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