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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | |||||
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | |||||
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Vishay Siliconix | MOSFET N-CH 60V 50A TO-262 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 300V 9.3A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 60V | 2400pF @ 25V | 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 40V 200A TO263-7 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 60V | 2400pF @ 25V | 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 250V 4.1A TO220FP | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 60V | 2400pF @ 25V | 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CHANNEL 600V 20A TO220 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D2Pak) | N-Channel | 60V | 2400pF @ 25V | 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 60V | 2400pF @ 25V | 3.7W (Ta), 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 50A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 60V | 2400pF @ 25V | 190W (Tc) | 50A (Tc) | 10V | 18 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V |