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9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TJM9619LR-LF
RFQ
Infineon Technologies MOSFET N-CH 20V 67A TO-220AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
TH3076.3
RFQ
Infineon Technologies MOSFET N-CH 20V 67A TO-262 TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
TH2267
RFQ
Infineon Technologies MOSFET N-CH 20V 50A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
SPD08P06PG SPD08P06
RFQ
Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
IRF3704ZCLPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 67A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
IRF3704ZSPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 67A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
IRF3704ZPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 67A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
IRF3704ZLPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 67A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
IRF3704ZCS
RFQ
Infineon Technologies MOSFET N-CH 20V 67A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 20V 1220pF @ 10V 57W (Tc) 67A (Tc) 4.5V, 10V 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V ±20V -
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