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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
I87-0284000
Per Unit
$33.1925
RFQ
Microsemi Corporation MOSFET N-CH 1000V 23A SOT-227 SOT-227-4, miniBLOC POWER MOS 8™ Tube MOSFET (Metal Oxide) Chassis Mount -55°C ~ 150°C (TJ) Active ISOTOP® N-Channel 1000V 9835pF @ 25V 545W (Tc) 23A (Tc) 10V 380 mOhm @ 18A, 10V - 305nC @ 10V ±30V -
HZM6.2NB3TL
Per Unit
$21.2103
RFQ
Microsemi Corporation MOSFET N-CH 1000V 35A T-MAX TO-247-3 Variant POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 1000V 9835pF @ 25V 1135W (Tc) 35A (Tc) 10V 380 mOhm @ 18A, 10V 5V @ 2.5mA 305nC @ 10V ±30V -
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