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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IDH20G120C5
Per Unit
$5.7608
RFQ
Infineon Technologies MOSFET N-CH 650V 44A HSOF-8 8-PowerSFN CoolMOS™ G7 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-HSOF-8 N-Channel 650V 2670pF @ 400V 245W (Tc) 44A (Tc) 10V 50 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V ±20V -
FP6298
Per Unit
$5.7122
RFQ
Infineon Technologies MOSFET NCH 650V 135A PG-HDSOP-10 10-PowerSOP Module CoolMOS™ G7 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-HDSOP-10-1 N-Channel 600V 2670pF @ 400V 278W (Tc) 47A (Tc) 10V 50 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V ±20V -
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