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Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PEF8071VV1.5
Per Unit
$2.4846
RFQ
Infineon Technologies MOSFET N-CH 650V 15A TO220-3 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 N-Channel 650V 1600pF @ 25V 34W (Tc) 15A (Tc) 10V 280 mOhm @ 9.4A, 10V 3.9V @ 675µA 63nC @ 10V ±20V -
IPD640N06
Per Unit
$3.9200
RFQ
Infineon Technologies MOSFET N-CH 650V 15A TO-220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO220-3-1 N-Channel 650V 1660pF @ 25V 156W (Tc) 15A (Tc) 10V 280 mOhm @ 9.4A, 10V 3.9V @ 675µA 63nC @ 10V ±20V -
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