- Package / Case :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 75V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | N-Channel | 75V | 4700pF @ 25V | 300W (Tc) | 80A (Tc) | 10V | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3-1 | N-Channel | 60V | 4500pF @ 25V | 79W (Tc) | 80A (Tc) | 10V | 7.4 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3 | N-Channel | 75V | 4700pF @ 25V | 300W (Tc) | 80A (Tc) | 10V | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | TO-220-3 | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 60V | 4500pF @ 25V | 79W (Tc) | 80A (Tc) | 10V | 7.4 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | - |