- Manufacture :
- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 600V 6.2A D2PAK | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 8 x 8 | N-Channel | 600V | 2035pF @ 100V | 174W (Tc) | 19A (Tc) | 10V | 185 mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | - | |||||
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Infineon Technologies | MOSFET N CH 300V 19A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 300V | 2340pF @ 25V | 210W (Tc) | 19A (Tc) | 10V | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 300V 19A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 300V | 2340pF @ 25V | 210W (Tc) | 19A (Tc) | 10V | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | - |