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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
XTL561030A-27-16-TR
RFQ
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET DirectFET™ Isometric SJ HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ SJ N-Channel 100V 890pF @ 25V 2.2W (Ta), 42W (Tc) 5.7A (Ta), 25A (Tc) 10V 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V ±20V -
FP5452D
Per Unit
$1.1600
RFQ
Infineon Technologies MOSFET N-CH 200V 12A TO-220AB TO-220-3 HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB N-Channel 200V 790pF @ 50V 80W (Tc) 12A (Tc) 10V 170 mOhm @ 7.2A, 10V 4.9V @ 50µA 23nC @ 10V ±20V -
ESD3V3U1U-02LSE6327
Per Unit
$0.6809
RFQ
Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET DirectFET™ Isometric SJ HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ SJ N-Channel 100V 890pF @ 25V 2.2W (Ta), 42W (Tc) 5.7A (Ta), 25A (Tc) 10V 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V ±20V -
IRF6645TR1PBF
RFQ
Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET DirectFET™ Isometric SJ HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ SJ N-Channel 100V 890pF @ 25V 2.2W (Ta), 42W (Tc) 5.7A (Ta), 25A (Tc) 10V 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V ±20V -
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