- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 40V 40A TSDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | N-Channel | 40V | 1900pF @ 20V | 2.1W (Ta), 35W (Tc) | 12A (Ta), 40A (Tc) | 4.5V, 10V | 9.7 mOhm @ 20A, 10V | 2V @ 14µA | 24nC @ 10V | ±20V | - | ||||||
|
Infineon Technologies | N-CHANNEL_55/60V | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-11 | N-Channel | 55V | 354pF @ 25V | 47W (Tc) | 19A (Tc) | 4.5V, 10V | 64 mOhm @ 13A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | - | ||||||
|
Infineon Technologies | MOSFET N-CH 55V 19A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | P-TO252-3 | N-Channel | 55V | 445pF @ 25V | 47W (Tc) | 19A (Tc) | 4.5V, 10V | 64 mOhm @ 8A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | - |