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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO262-3 | N-Channel | 650V | 1850pF @ 100V | 151W (Tc) | 17.5A (Tc) | 10V | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 650V | 1850pF @ 100V | 151W (Tc) | 17.5A (Tc) | 10V | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 650V | 1850pF @ 100V | 34W (Tc) | 17.5A (Tc) | 10V | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | N-Channel | 650V | 1850pF @ 100V | 151W (Tc) | 17.5A (Tc) | 10V | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | - |