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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
TG110-BP06J24TR
Per Unit
$0.1047
RFQ
ROHM Semiconductor MOSFET N-CH 20V 300MA VMT3 SC-96 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Not For New Designs TSMT3 N-Channel 45V 510pF @ 10V 1W (Ta) 3A (Ta) 2.5V, 4.5V 67 mOhm @ 3A, 4.5V 1.5V @ 1mA 6.2nC @ 4.5V ±12V
PTZ24B
Per Unit
$0.1320
RFQ
ROHM Semiconductor MOSFET N-CH 30V 4A TSMT3 SC-96 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Not For New Designs TSMT3 N-Channel 45V 510pF @ 10V 1W (Ta) 3A (Ta) 2.5V, 4.5V 67 mOhm @ 3A, 4.5V 1.5V @ 1mA 6.2nC @ 4.5V ±12V
SM2004NSD
RFQ
Alpha Omega Semiconductor Inc. MOSFET N-CH 500V TO PKG TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3L N-Channel 20V 436pF @ 10V 1.4W (Ta) 3A (Ta) 1.8V, 4.5V 50 mOhm @ 4.2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V ±8V
AO3414
Per Unit
$0.0858
RFQ
Alpha Omega Semiconductor Inc. MOSFET N-CH 20V 4.2A SOT23 TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3L N-Channel 20V 436pF @ 10V 1.4W (Ta) 3A (Ta) 1.8V, 4.5V 50 mOhm @ 4.2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V ±8V
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