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9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE4274V10
RFQ
Infineon Technologies MOSFET N-CH 20V 110A TO-220AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Discontinued at Digi-Key D2PAK N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
TLE4274G
RFQ
Infineon Technologies MOSFET N-CH 30V 59A D2PAK TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
SPP20M60C3
RFQ
Infineon Technologies MOSFET N-CH 55V 51A TO-220AB TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
SPP17N80C2
RFQ
Infineon Technologies MOSFET P-CH 55V 20A I-PAK TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
SPE0504S26RGB
RFQ
Infineon Technologies MOSFET N-CH 55V 42A DPAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
H6N03LA
Per Unit
$0.6198
RFQ
Infineon Technologies MOSFET N-CH 55V 51A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
IRLZ44ZL
RFQ
Infineon Technologies MOSFET N-CH 55V 51A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
IRLZ44Z
RFQ
Infineon Technologies MOSFET N-CH 55V 51A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
IRLZ44ZS
RFQ
Infineon Technologies MOSFET N-CH 55V 51A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 55V 1620pF @ 25V 80W (Tc) 51A (Tc) 4.5V, 10V 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V ±16V -
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