- Manufacture :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-313 | N-Channel | 250V | 422pF @ 25V | 41W (Tc) | 5A (Tc) | 10V | 430 mOhm @ 5A, 10V | 4V @ 13µA | 6.2nC @ 10V | ±20V | - | |||||
,TO-226_straightlead.jpg)
|
|
ON Semiconductor | MOSFET N-CH 600V 0.3A TO-92 | TO-226-3, TO-92-3 (TO-226AA) | QFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-92-3 | N-Channel | 600V | 170pF @ 25V | 1W (Ta), 3W (Tc) | 300mA (Tc) | 10V | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 600V 1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 600V | 170pF @ 25V | 2.5W (Ta), 28W (Tc) | 1A (Tc) | 10V | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - | |||||
|
|
ON Semiconductor | MOSFET N-CH 600V 1A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | N-Channel | 600V | 170pF @ 25V | 2.5W (Ta), 28W (Tc) | 1A (Tc) | 10V | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 600V 1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-Pak | N-Channel | 600V | 170pF @ 25V | 2.5W (Ta), 28W (Tc) | 1A (Tc) | 10V | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - | |||||
|
|
|
ON Semiconductor | MOSFET N-CH 600V 300MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | QFET® | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | N-Channel | 600V | 170pF @ 25V | 1W (Ta), 3W (Tc) | 300mA (Tc) | 10V | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 600V 0.2A SOT-223-4 | TO-261-4, TO-261AA | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223-4 | N-Channel | 600V | 170pF @ 25V | 2.1W (Tc) | 200mA (Tc) | 10V | 11.5 Ohm @ 100mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | - |