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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ROHM Semiconductor | MOSFET N-CH 600V 15A LPT | TO-220-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | 175°C (TJ) | Active | TO-220AB | N-Channel | 650V | 1200pF @ 500V | 165W (Tc) | 29A (Tc) | 18V | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | +22V, -6V | ||||
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ROHM Semiconductor | MOSFET N-CH 600V 15A LPT | TO-220-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | 175°C (TJ) | Active | TO-220AB | N-Channel | 650V | 1200pF @ 500V | 165W (Tc) | 29A (Tc) | 18V | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | +22V, -6V |