- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 58A IPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | N-Channel | 30V | 1350pF @ 15V | 55W (Tc) | 58A (Tc) | 4.5V, 10V | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 80V 38A IPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | N-Channel | 80V | 1710pF @ 25V | 110W (Tc) | 38A (Tc) | 10V | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 75A IPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | N-Channel | 20V | 2410pF @ 10V | 88W (Tc) | 75A (Tc) | 2.8V, 10V | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | - |