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Voltage - Breakdown (V(BR)GSS) :
Current - Drain (Idss) @ Vds (Vgs=0) :
Input Capacitance (Ciss) (Max) @ Vds :
Resistance - RDS(On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Power - Max Voltage - Breakdown (V(BR)GSS) Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Input Capacitance (Ciss) (Max) @ Vds Resistance - RDS(On)
LT3830CS8
RFQ
ON Semiconductor JFET N-CH 40V 0.625W TO92 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - Through Hole -55°C ~ 150°C (TJ) Obsolete TO-92-3 N-Channel 625mW 40V 15mA @ 20V 2V @ 1nA 16pF @ 20V 50 Ohms
LT3757HMSE
RFQ
ON Semiconductor JFET N-CH 30V 625MW TO92 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - Tape & Box (TB) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-92-3 N-Channel 625mW 30V 25mA @ 20V 2V @ 1nA 14pF @ 20V 60 Ohms
LT3757AIDD
RFQ
ON Semiconductor JFET N-CH 30V 625MW TO92 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - Through Hole -55°C ~ 150°C (TJ) Obsolete TO-92-3 N-Channel 625mW 30V 25mA @ 20V 2V @ 1nA 14pF @ 20V 60 Ohms
LT3757AEMSE#TRPBF.
RFQ
ON Semiconductor JFET N-CH 30V 625MW TO92 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - Through Hole -55°C ~ 150°C (TJ) Obsolete TO-92-3 N-Channel 625mW 30V 25mA @ 20V 2V @ 1nA 14pF @ 20V 60 Ohms
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