- Manufacture :
- Vf - Forward Voltage :
- If - Forward Current :
- Wavelength :
- Radiant Intensity :
- Beam Angle :
- Applied Filters :
0 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vf - Forward Voltage | Series | Packaging | If - Forward Current | Power Rating | Wavelength | Radiant Intensity | Beam Angle | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LED Engin | Infrared Emitters - High Power Infrared 940nm Dual Junction | 12.4 V | Tray | 700 mA | 8.5 W | 940 nm | - | 100 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 940nm Dual Junction | 3.2 V | Tray | 1000 mA | 3.2 W | 940 nm | - | 90 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 850nm | 2 V | LZ1 | Tray | 1000 mA | 5 W | 850 nm | 90 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 850nm Dual Junction | 12.4 V | Tray | 700 mA | 8.5 W | 850 nm | - | 100 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 850nm | 1.9 V | Tray | 1000 mA | 1.9 W | 850 nm | 90 deg | |||||||
|
LED Engin | Infrared Emitters - High Power Infrared 850nm Dual Junction | 3.2 V | Tray | 1000 mA | 3.2 W | 850 nm | - | 90 deg | ||||||
|
OSRAM Opto Semiconductors | Infrared Emitters - High Power IR, 850nm | 15.5 V | Tray | 1000 mA | 19 W | 850 nm | 1400 mW/sr | 60 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 850nm | 7.4 V | LZ4 | Tray | 700 mA | 10 W | 850 nm | 95 deg | ||||||
|
LED Engin | Infrared Emitters - High Power Infrared 940nm | 7.2 V | Tray | 940 nm |