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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vf - Forward Voltage | Series | Packaging | If - Forward Current | Power Rating | Wavelength | Radiant Intensity | Beam Angle | |
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LED Engin | Infrared Emitters - High Power Infrared 940nm Dual Junction | 3.2 V | Reel | 1000 mA | 3.2 W | 940 nm | - | 90 deg | |||||
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OSRAM Opto Semiconductors | Infrared Emitters - High Power Infrared 850nm 150 deg beam angle | 1.65 V | Reel | 1000 mA | 2.1 W | 850 nm | 170 mW/sr | 75 deg | |||||
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LED Engin | Infrared Emitters - High Power Infrared - 850nm | 1.9 V | Cut Tape | 1000 mA | 1.9 W | 850 nm | 90 deg | ||||||
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LED Engin | Infrared Emitters - High Power Infrared 940nm Dual Junction | 3.2 V | Tray | 1000 mA | 3.2 W | 940 nm | - | 90 deg | |||||
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LED Engin | Infrared Emitters - High Power Infrared 850nm | 2 V | LZ1 | Tray | 1000 mA | 5 W | 850 nm | 90 deg | |||||
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LED Engin | Infrared Emitters - High Power Infrared 850nm | 1.9 V | Tray | 1000 mA | 1.9 W | 850 nm | 90 deg | ||||||
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LED Engin | Infrared Emitters - High Power Infrared 850nm Dual Junction | 3.2 V | Tray | 1000 mA | 3.2 W | 850 nm | - | 90 deg | |||||
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LED Engin | Infrared Emitters - High Power Infrared 850nm Dual Junction | 3.2 V | Reel | 1000 mA | 3.2 W | 850 nm | - | 90 deg | |||||
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OSRAM Opto Semiconductors | Infrared Emitters - High Power IR, 850nm | 15.5 V | Tray | 1000 mA | 19 W | 850 nm | 1400 mW/sr | 60 deg |