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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Number of Channels | Polarity | Breakdown Voltage | Clamping Voltage | Test Current | Continuous Collector Current | Peak Pulse Current | Input Capacitance | Drain to Source Voltage (Vdss) | Peak Pulse Power | Collector Emitter Saturation Voltage | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Reverse Standoff Voltage | Power Dissipation | Collector Emitter Voltage (VCEO) | Emitter Base Voltage (VEBO) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | hFE Min | Forward Voltage | Min Breakdown Voltage | Zener Voltage | Max Junction Temperature (Tj) | Collector Base Voltage (VCBO) | Lifecycle Status | Reverse Recovery Time | Max Repetitive Reverse Voltage (Vrrm) | |
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8,739
In-stock
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Taiwan Semiconductor | 2.0 | NPN | 51 V | 70.1 V | 2.5 mA | 4 A | 21.4 A | 1.5 kW | 3 V | 9.8 V | 2.5 A | 24 V | 200 mW | 400 V | 9 V | 1 V | 25.4 V | 75 V | 700 V | 50 ns | 250 V |