- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
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Central Semiconductor | Bipolar Transistors - BJT NPN GP Power | Through Hole | TO-3 | + 150 C | 2N3713 | NPN | 60 V | 80 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT PNP Power SW | Through Hole | TO-3 | + 200 C | 2N3792 | PNP | 80 V | 80 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT NPN GP Power | Through Hole | TO-3 | + 200 C | 2N3716 | NPN | 80 V | 100 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT . . | Through Hole | TO-66-2 | + 200 C | 2N3741 | Single | PNP | 60 V | 60 V | 7 V | 0.6 V | 10 A | 4 MHz | |||||
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Central Semiconductor | Bipolar Transistors - BJT NPN GP Power | Through Hole | TO-3 | + 200 C | 2N3715 | NPN | 60 V | 80 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT Leaded Power Transistor | Stud | TO-66-2 | + 200 C | 2N3740 | PNP | 60 V | 60 V | 7 V | 600 mV | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT PNP GP Power | Through Hole | TO-3 | + 200 C | 2N3791 | PNP | 60 V | 60 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT PNP Pwr Trans 80V 4.0A 25W | Through Hole | TO-66-2 | + 200 C | 2N3741 | Single | PNP | 60 V | 60 V | 7 V | 0.6 V | 10 A | 4 MHz | |||||
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Central Semiconductor | Bipolar Transistors - BJT PNP GP Power | Through Hole | TO-3 | + 150 C | 2N3789 | PNP | 60 V | 60 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT PNP GP Power | Through Hole | TO-3 | + 200 C | 2N3790 | PNP | 80 V | 80 V | 7 V | 1 V | 10 A | 4 MHz | ||||||
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Central Semiconductor | Bipolar Transistors - BJT NPN GP Power | Through Hole | TO-3 | + 150 C | 2N3714 | NPN | 80 V | 100 V | 7 V | 1 V | 10 A | 4 MHz |