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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 284 W | Single | 900 V | 3.2 V | 64 A | +/- 100 nA | |||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 8 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | 284 W | 900 V | 2.5 V | 87 A | 100 nA | ||||||
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IXYS | IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode | IGBT Silicon Modules | SOT-227 | + 150 C | Tube | Single | 900 V | 2.7 V | 115 A | 100 nA |