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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules 1200V 40A PIM | IGBT Silicon Modules | EconoPIM2 | + 125 C | 200 W | Hex | 1200 V | 2.3 V | 55 A | 400 nA | ||||||
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IXYS | IGBT Modules 550 Amps 1200V | IGBT Silicon Modules | Y3-DCB-10 | + 150 C | Bulk | 2.75 kW | Single | 1.2 kV | 2.3 V | 670 A | 1.6 uA | |||||
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Infineon Technologies | IGBT Modules IGBT 1700V 450A | IGBT Silicon Modules | + 150 C | 2500 W | Dual | 1700 V | 2.3 V | 600 A | 400 nA | |||||||
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Fairchild Semiconductor | IGBT Modules 600V/30A/ SPM2 | SPM32-AA | Tube | 62 W | 600 V | 2.3 V | 30 A | 250 uA | ||||||||
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Infineon Technologies | IGBT Modules 1200V 40A PIM | EconoPIM3-24 | + 125 C | 200 W | Hex | 1200 V | 2.3 V | 40 A | 400 nA |