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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1 kW, 340 W | Dual Common Emitter | 1.2 kV, 600 V | 2.05 V, 1.5 V | 300 A, 150 A | 480 nA, 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3F-32 | + 100 C | 250 W, 176 W | Dual Common Emitter | 1.2 kV, 600 V | 2.05 V, 1.5 V | 75 A, 80 A | 120 nA, 600 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | + 100 C | 500 W, 250 W | Dual Common Emitter | 1.2 kV, 600 V | 2.05 V, 1.5 V | 150 A, 100 A | 240 nA, 600 nA |