- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules EASY | IGBT Silicon Modules | EasyPack1B | + 150 C | 275 W | 3-Phase | 650 V | 1.7 V | 95 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Econo 3 | + 150 C | Array 7 | 600 V | 95 A | ||||||||
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IXYS | IGBT Modules High Frequency Range >40khz CIGBT w/Diode | SOT-227 B-4 | + 150 C | Tube | 460 W | 1.2 kV | 1.2 kV | 95 A | 100 nA | ||||||
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IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | |||||
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IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | PLUS247-3 | + 150 C | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | ||||||
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack1B | + 150 C | Tray | 275 W | 3-Phase | 650 V | 1.7 V | 95 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 600V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 2A | + 125 C | 330 W | Hex | 600 V | 2.2 V | 95 A | 400 nA |