- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXYS | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | IGBT Silicon Modules | SOT-227B-4 | + 175 C | Tube | 750 W | Single Dual Emitter | 650 V | 1.98 V | 210 A | 100 nA | ||||
|
|
Littelfuse | IGBT Modules 1200V 150A Dual | IGBT Silicon Modules | Package D | + 150 C | Bulk | 1100 W | Dual | 1200 V | 1.8 V | 210 A | 200 nA | ||||
|
|
Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.25 kW | Half Bridge | 1200 V | 2.5 V | 210 A | 320 nA |