- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 277 W | Dual | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 277 W | Single | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 277 W | Dual | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 277 W | Full Bridge | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 277 W | Dual | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 277 W | Single | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 277 W | Dual | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2-18 | + 100 C | 277 W | Dual | 1.2 kV | 1.7 V | 75 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | 277 W | Single | 600 V | 2.1 V | 75 A | 100 nA |